transistor(pnp) features ? complementary to mmst 440 1 ? small surface mount pa ckage marking:k 3 t m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 40 v v ceo collector - emitter voltage - 40 v v ebo emitter - base voltage - 5 v i c collector current - 600 m a p c collector power dissipation 200 m w r ja thermal resistance fro m j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltag e v (br) cbo i c = - 1 0 0 a , i e =0 - 40 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 40 v emitter - base breakdown voltage v (br)eb o i e = - 1 0 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 35 v, i e =0 - 100 n a collector cut - off current i c e o v c e = - 35 v, i b =0 - 500 n a v ce = - 1 v, i c = - 100 a 30 v ce = - 1 v, i c = - 1m a 60 v ce = - 1 v, i c = - 10m a 100 v ce = - 2 v, i c = - 150m a 100 300 dc current gain h fe v ce = - 2 v, i c = - 500m a 20 i c = - 1 50 m a, i b = - 1 5 ma - 0. 4 v collector - emitter saturation voltage v ce(sat) i c = - 50 0 m a, i b = - 5 0 ma - 0. 75 v i c = - 1 5 0m a, i b = - 1 5 ma - 0.75 - 0. 9 5 v base - emitter saturation voltage v b e(sat) i c = - 5 0 0m a, i b = - 5 0 ma - 1. 3 v transition frequency f t v ce = - 1 0 v,i c = - 2 0 ma , f=1 00 mhz 200 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1mhz 8.5 pf so t C 3 23 1. base 2. emitter 3. collector MMST4403 1 date:2011/05 www.htsemi.com semiconductor jinyu
|
